According to a recent study titled “Gallium Nitride Device Market Size and Regional Forecast, 2024-2027″ by Fortune Business Insights™, the global gallium nitride (GaN) device market is expected to experience significant growth due to the increasing demand for fast chargers worldwide. The market was valued at USD 20.56 billion in 2019 and is anticipated to reach USD 28.40 billion by 2027, with a projected compound annual growth rate (CAGR) of 4.28% during the forecast period.
A list of all the prominent gallium nitride device manufacturers present in the global market:
- Cree, Inc. (The U.S.)
- Infineon Technologies AG (Germany)
- Efficient Power Conversion Corporation. (The U.S.)
- EPISTAR Corporation (Taiwan)
- GaN Systems (Canada)
- MACOM (The U.S.)
- Microsemi (The U.S.)
- Mitsubishi Electric Corporation (Japan)
- NICHIA CORPORATION (Japan)
- Northrop Grumman Corporation (The U.S.)
- NXP Semiconductors. (Netherland)
- Qorvo, Inc (The U.S.)
- Texas Instruments Incorporated. (The U.S.)
- Toshiba Corporation (Japan)
Browse In-depth Summary of This Research Insight:
https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367
Drivers & Restraints-
Expansion of Telecommunications Domain to Accelerate Growth
The demand for energy efficient GaN devices is surging rapidly owing to the expansion of the telecommunications domain. Most of the internet service providers are nowadays focusing on providing lower latency with optical cable wires, ubiquitous connectivity, and network with higher capacity. Apart from that, the rising utilization of GaN devices in the 5G infrastructure is likely to propel the gallium nitride device market growth in the near future. However, the high cost associated with the maintenance and development of gallium nitride devices may hinder growth.
Segmentation- Gallium Nitride Device Market
Opto-semiconductor Device Segment to Grow Rapidly Backed by Increasing Usage in Lasers
Based on device type, the opto-semiconductor device segment procured the highest gallium nitride market share in 2019. This growth is attributable to their increasing usage in various aerospace applications, such as Light Detection and Ranging (LiDAR) and pulsed lasers. Besides, they are used in optoelectronics, LEDs, lasers, photodiodes, and solar cells.
Regional Insights- Gallium Nitride Device Market
High Demand for Wireless Devices to Favor Growth in Europe
Geographically, North America generated USD 7.38 billion in 2019 because of the presence of numerous prominent manufacturers, such as MACOM, Cree, Inc., Northrop Grumman Corporation, Efficient Power Conversion Corporation, Microsemi, and others in this region.
Europe, on the other hand, is anticipated to grow significantly on account of the rising demand for wireless devices in Germany, France, and the U.K. In Asia Pacific, the rising demand for gallium nitride devices from emerging nations, such as India and China would aid growth.
Competitive Landscape-
Key Companies Focus on Winning New Contracts to Intensify Competition
The global market for gallium nitride devices is highly fragmented with the presence of numerous reputed manufacturers. Most of them are focusing on achieving new contracts from significant governments, as well as private agencies to deliver their in-house products. Below are the two latest industry developments:
- June 2020: Raytheon Missiles & Defense provided a contract worth USD 2.3 billion to the U.S. Missile Defense Agency (MDA). The latter will deliver seven GaN-based Army Navy/Transportable Radar Surveillance (AN/TPY-2) units. It is a part of the company’s Terminal High Altitude Area Defense (THAAD) system.
- July 2019: Transphorm announced a new contract worth USD 18.5 million from the U.S. Department of Defense (DoD) Office of Naval Research (ONR). It includes a Base Program that is aimed at commercializing nitrogen polar GaN.
The gallium nitride (GaN) device market is witnessing significant advancements and innovations, fueled by emerging trends and upcoming developments. As technology continues to evolve, here are some key trends and developments shaping the future of the GaN device market:
- Increased Adoption of GaN Power Electronics: GaN-based power electronics are gaining traction across various industries due to their superior performance, efficiency, and smaller form factor compared to traditional silicon-based counterparts. Emerging applications in electric vehicles, renewable energy systems, and consumer electronics are driving the demand for GaN power devices.
- Rapid Growth in Wireless Charging Solutions: With the proliferation of smartphones, wearables, and other portable devices, there is a growing demand for wireless charging solutions. GaN-based wireless chargers offer faster charging speeds and higher efficiency, making them an attractive option for consumers and manufacturers alike. Expect to see continued growth in GaN-enabled wireless charging technologies.
- Expansion of GaN RF Devices: Gallium nitride radio frequency (RF) devices are gaining popularity in telecommunications, aerospace, and defense sectors. The inherent properties of GaN, such as high power density, high-frequency operation, and low noise, make it well-suited for next-generation RF applications, including 5G networks, radar systems, and satellite communications.
- Integration of GaN in Automotive Electronics: The automotive industry is increasingly adopting GaN-based solutions for various applications, including onboard chargers, DC-DC converters, and powertrain systems. GaN devices offer higher efficiency, reduced size, and weight compared to conventional silicon-based components, contributing to improved vehicle performance and energy efficiency.
- Advancements in GaN Manufacturing Processes: Continuous advancements in GaN manufacturing processes are leading to cost reductions and improved device performance. Innovations such as GaN-on-silicon substrates, epitaxial growth techniques, and device packaging technologies are enhancing the scalability and reliability of GaN devices, driving their widespread adoption across different industries.
- Focus on Sustainable and Green Technologies: With growing concerns about environmental sustainability, there is a shift towards the development of green technologies in the GaN device market. GaN-based power electronics offer higher energy efficiency and lower carbon footprint compared to traditional semiconductor materials, making them an attractive choice for eco-conscious consumers and businesses.
In conclusion, the gallium nitride device market is witnessing a period of rapid evolution, driven by emerging trends and upcoming developments. From power electronics and wireless charging to RF applications and automotive electronics, GaN devices are poised to play a crucial role in shaping the future of various industries. Stay tuned for further advancements and innovations in this dynamic market segment.
Gallium Nitride Device Market: Exploring Regional Dynamics and Market Growth
The gallium nitride (GaN) device market is experiencing dynamic growth worldwide, with regional dynamics playing a crucial role in shaping market trends and opportunities. Here’s an exploration of how different regions are contributing to the growth of the GaN device market:
- North America: The North American region, led by the United States, is at the forefront of GaN device adoption, driven by the presence of key market players, robust R&D activities, and increasing investments in emerging technologies. The region’s focus on applications such as defense, aerospace, telecommunications, and automotive electronics is fueling the demand for GaN devices.
- Europe: Europe is witnessing significant growth in the GaN device market, supported by the region’s emphasis on energy efficiency, renewable energy sources, and smart grid infrastructure. Countries like Germany, France, and the UK are leading the way in GaN-based power electronics, while advancements in automotive electronics and wireless communication technologies are further driving market expansion.
- Asia Pacific: The Asia Pacific region, particularly China, Japan, and South Korea, is a major hub for GaN device manufacturing, driven by the presence of key semiconductor fabs and electronics OEMs. Rapid industrialization, urbanization, and increasing investments in 5G infrastructure are driving the demand for GaN devices in applications such as power supplies, RF amplifiers, and consumer electronics.
- Latin America: Latin America is emerging as a promising market for GaN devices, fueled by growing investments in infrastructure development, renewable energy projects, and telecommunications expansion. Countries like Brazil, Mexico, and Chile are witnessing increasing adoption of GaN-based solutions in power electronics, wireless communication systems, and automotive applications.
- Middle East and Africa: The Middle East and Africa region are experiencing gradual adoption of GaN devices, driven by initiatives focused on energy diversification, smart grid deployment, and digital transformation. Governments and industries in countries like Saudi Arabia, UAE, and South Africa are investing in GaN technology to enhance energy efficiency, reduce carbon emissions, and meet growing demand for electricity.
Overall, regional dynamics play a significant role in shaping the growth trajectory of the gallium nitride device market. While North America and Europe lead in terms of technological advancements and market maturity, Asia Pacific offers immense growth potential driven by manufacturing capabilities, infrastructure development, and burgeoning end-user industries. Latin America and the Middle East & Africa regions are also emerging as promising markets, presenting opportunities for GaN device manufacturers and suppliers to capitalize on evolving market trends and demands.
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